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SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF173CQ/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability • Low Noise Figure — 1.5 dB Typ at 2.
MRF173CQ Datasheet
