MRF173CQ Datasheet | Tyco Electronics

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173CQ/D The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement Mode MOSFET Designed for broadband mercial and military applications up to 200 MHz frequency range. The high- power, high- gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. - Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 d B (13 d B Typ) Efficiency = 55% Min. (60% Typ) - Low Thermal Resistance - Ruggedness Tested at Rated Output Power - Nitride Passivated Die for Enhanced Reliability - Low Noise Figure - 1.5 d B Typ at 2.0 A, 150 MHz - Excellent Thermal Stability; Suited for Class A Operation MAXIMUM RATINGS Rating Drain- Source Voltage Drain- Gate Voltage Gate- Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Temperature Range Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ±40 9.0 220 1.26 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C G S D 80 W, 28 V, 175 MHz N- CHANNEL BROADBAND RF POWER MOSFET CASE 316- 01, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain- Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 m A Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) Gate- Source Leakage Current (VGS = 40 V, VDS = 0 V) V(BR)DSS IDSS IGSS 65 - - - - - - 2.0 1.0 V m A µA ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 50 m A) Drain- Source On- Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) Forward Transconductance (VDS = 10 V, ID = 2.0 A) VGS(th) VDS(on) gfs 1.0 - 1.8 3.0 - 2.2 6.0 1.4 - V V mhos (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and...