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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF173/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability • Low Noise Figure — 1.5 dB Typ at 2.
MRF173 Datasheet
