| Part Number | MRF173 Datasheet |
|---|---|
| Manufacturer | Tyco Electronics |
| Overview |
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF173/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military app.
Storage Temperature Range Operating Temperature Range Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ±40 9.0 220 1.26 *65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTE. |
MRF173 Datasheet and Specifications PDF
The MRF173 is a N-CHANNEL BROADBAND RF POWER MOSFET.
| Part Number | MRF173 Datasheet |
|---|---|
| Description | The RF MOSFET |
| Manufacturer | MACOM Technology Solutions |
| Overview |
MRF173
The RF MOSFET Line 80W, 175MHz, 28V
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device.
a vertical structure with a planar design, thus avoiding the processing difficulties associated with V *groove power FETs. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages . |
| Part Number | MRF173 Datasheet |
|---|---|
| Description | (MRF173/CQ) N-CHANNEL BROADBAND RF POWER MOSFETs |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF173/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement Mode MOSFETs
Designed for broadband commercial and.
a vertical structure with a planar design, thus avoiding the processing difficulties associated with V *groove power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages. |