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MRF3104 - (MRF3104 / MRF3105 / MRF3106) MICROWAVE LINEAR POWER TRANSISTORS

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3104/D The RF Line Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 Output Power Power Gain 0.5 W 10.5 dB MRF3105 0.8 W 9 dB MRF3106 1.6 W 8 dB MRF3104 MRF3105 MRF3106 8.0–12 dB GAIN 1.55–1.65 GHz MICROWAVE LINEAR POWER TRANSISTORS • Low Parasitic Microwave Stripline Package • Gold Metalization for Improved Reliability • Diffused Ballast Resistors MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current MRF3104, MRF3105 MRF3106 Symbol VCEO VCES VEBO IC Tj Tstg Value 22 50 3.5 0.4 0.