MRF3106
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF3104/D
The RF Line
Microwave Linear Power Transistors
- Designed for Class A, mon Emitter Linear Power Amplifiers.
- Specified 20 Volt, 1.6 GHz Characteristics:
MRF3104 Output Power Power Gain 0.5 W 10.5 d B MRF3105 0.8 W 9 d B MRF3106 1.6 W 8 d B
MRF3104 MRF3105 MRF3106
8.0- 12 d B GAIN 1.55- 1.65 GHz MICROWAVE LINEAR POWER TRANSISTORS
- Low Parasitic Microwave Stripline Package
- Gold Metalization for Improved Reliability
- Diffused Ballast Resistors
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current MRF3104, MRF3105 MRF3106 Symbol VCEO VCES VEBO IC Tj Tstg Value 22 50 3.5 0.4 0.8 200
- 65 to +125 Unit Vdc Vdc Vdc Adc °C °C CASE 305A- 01, STYLE 1 (.204″ PILL)
Operating Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case, DC MRF3104 MRF3105 MRF3106 Symbol RθJC (DC) Max...
