MRF428
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF428/D
The RF Line
NPN Silicon RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 Volt, 30 MHz Characteristics
- Output Power = 150 W (PEP) Minimum Gain = 13 DB Efficiency = 45%
- Intermodulation Distortion @ 150 W (PEP)
- IMD = -32 db (Max)
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW
150 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Withstand Current
- 10 s Total Device Dissipation @ T C = 25 °C Derate above 25 °C Storage Temperature Range Symbol VCEO VCBO VEBO IC
- PD Tstg Value 55 110 4.0 20 30 320 1.83 -65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case...
