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PE3 - GaAs Foundry Services PROCESS PE3

General Description

M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz.

The focus is on products for moderate to high volume applications.

Key Features

  • 0.5 µm MBE MESFET Technology for High Power.

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Full PDF Text Transcription (Reference)

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GaAs Foundry Services PROCESS PE3 Features • • • • • • 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging PE3 V2.00 Typical RF Performance FC06 (6X150) 900 um FET Param. MAG PSAT PAE ft Test Conditions VDS = 8V, IDS = .40IDSS VDS = 8V, IDS = .40IDSS VDS = 8V, IDS = .40IDSS VDS = 8V, IDS = .40IDSS Freq. 2/12GHz 2/12GHz 2/12GHz -----Typ. Val. 22/13.5dB 680/525mW/mm 50/41% 20GHz Description M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications.