PE3 Overview
M/A-’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications. M/A- offers a full pliment of foundry services to meet the requirements for custom designing a MMICbased die or packaged product.
PE3 Key Features
- 0.5 µm MBE MESFET Technology for High Power

