The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
an AMP comoanv
Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
4W
PH1819-4N
v2.00
,975 .‘24 77, i
.
Absolute Maximum Ratings at 25°C
Parameter Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance Symbol Vcm VCES VES0 ‘c PO TJ TST0 eJC Rating
60
60
Units V V V 1 A W “C “C
“C/W
UN-ESS OTHERWlSE ND-ED, TOLERANZES ARE :M1, L,HETERS i . J _ ,253~.DlO , c&43*.25) .0045? OOl:,
3.0 0.
PH1819-4N Datasheet
