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PH2323-1 - CW Power Transistor/ 1W 2.3 GHz

Key Features

  • l l l l l l l 1W PH2323-1 v2.00 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package . lOCZ31C :2.s4.25, !t , I Absolute Maximum Ratings at 25°C 1 ,233 el.84) / lOD:. U:O :2.5L=.25) 1 UN-53 3TRiRWiSE NOTED,.

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3 .------ an AMP comDanv CW Power Transistor, 2.3 GHz Features l l l l l l l 1W PH2323-1 v2.00 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package .lOCZ31C :2.s4.25, !t , I Absolute Maximum Ratings at 25°C 1 ,233 el.84) / lOD:.U:O :2.5L=.25) 1 UN-53 3TRiRWiSE NOTED, TDLERANCES ARE :HILLI,,ETERS t,,3,,M> Electrical Characteristics at 25°C Test Fixture Impedances F(GHz) 2.30 zsw 12.5 - i26.0 z,,w 3.7+j10.4 CW Power Transistor, 1W PH2323-1 v2.00 RF Test Fixture 34N4UA JACKS 2 ?L4,ES MbiL3ZY TT5CY50A JUMPER SMACONNECTOR MIA-COM 2052-5636-02 2 PLACES LIEATS!NK, 4LtJMINUM 73050255-03 l I .