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PH2323-3 - CW Power Transistor/ 3.5W 2.3 GHz

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package 3.5W PH2323-3 v2.00 Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Electrical Characteristics Parameter Collector-Emitter Collector-Emitter Input Power Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance Breakdown Voltage Leakage Current at 25°C 1 Symbol 1 Mi.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH2323-1 CW Power Transistor/ 1W 2.3 GHz
PH2323-14 CW Power Transistor/14W 2.3 GHz
PH2323-5 CW Power Transistor/ 5W /2.3 GHz
PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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an AMP cormany CW Power Transistor, 2.3 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package 3.5W PH2323-3 v2.00 Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Electrical Characteristics Parameter Collector-Emitter Collector-Emitter Input Power Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance Breakdown Voltage Leakage Current at 25°C 1 Symbol 1 Min 1 Max 1 Units 1 Test Conditions BV,,, ICES PIN GP ‘Ic RL 60 1 1.0 1 V mA w I,=5 mA V,,=28 v V,,=28 8 30 0.48 - V, PoUT=3.0W, F=2.3 GHz -I V, P,,?3.0 V, P,LI.F3.0 dB % 1 V,,=28 1 V,,=28 W, F=2.3 GHz W, F=2.3 GHz W, F=2.