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Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz
v2.00
Features
NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic MtxaKeramic Package
903 (22.86:
Absolute Maximum Ratings at 25°C
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units lest Conditions
Collector-Emitter Breakdown Voltage Collector-EmitterLeakage Current Thermal Resistance Output Power Power Gain
BVcEs ‘ES RTHIJC~ POUT GP
65
1.5 2.2
V mA “C/W’ W dB % dB -
I,=1 0 mA v,,=40 v V,,=36 V, P,,=1.3 W, F~2.7, 2.8, 2.
PH2729-8SM Datasheet
