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PHI214-25S - Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz

Features

  • ----- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package I .375:013 (S.53r.25) +:iZ’a,, - c. . ^ :2o. s3> ,320 1 : L . :50 / ::. z7> /’ CCLLXIOi( I .12c :3.35> I- Absolute Maximum Ratings at 25°C Broadband Test Fixture Impedances F(GHz) 1.20 1.30 1.40 TEST IN=l!’ CiRC!LT.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-30EL Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
PHI214-6M Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz

Full PDF Text Transcription

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an AMP comnanv Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz v2.00 Features ----- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package I .375:013 (S.53r.25) +:iZ’a,, - c..^ :2o.s3> ,320 1 : L .:50 / ::.z7> /’ CCLLXIOi( I .12c :3.35> I- Absolute Maximum Ratings at 25°C Broadband Test Fixture Impedances F(GHz) 1.20 1.30 1.40 TEST IN=l!’ CiRC!LT FIXTURE OLJTPUT Z,@) 2.1 - j4.5 Z,,(Q) 3.7 + j0.9 3.6 + j0.4 3.0 + j0.2 f I +on ,- - I - - CIRCUIT 2.1 - j3.9 2.2 - j3.
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