NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetaVCeramic Package
.093=.013 :2.29L.25>
7
3goF
:2.29i.25>
Absolute Maximum Ratings at 25°C
i
. mt.010 .004z.001
1
(1.52)
INCHES.
=
-----
an AMP company
Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetaVCeramic Package
.093=.013 :2.29L.25>
7
3goF
:2.29i.25>
Absolute Maximum Ratings at 25°C
i
.mt.010 .004z.001
1
(1.52)
INCHES