SW-475 Datasheet | Tyco Electronics

.. SPDT High Isolation Terminated Switch 0.5 - 3.0 GHz Functional Schematic 16 15 14 13 Features n Positive Voltage Control (0 / +5 V) n High Isolation (53 d B typ. @ 0.9 GHz, 50 d B typ @ 1.9 GHz) n 50-Ohm Internal Terminations n Low Insertion Loss (0.6 d B typ. @ 0.9 GHz, 0.7 d B typ. @ 1.9 GHz) n 4 mm FQFP-N 16-Lead Package RF2 1 2 3 RFC 4 V1 V2 5 6 RF1 12 11 10 9 Description The M/A- SW-475 Ga As monolithic switch provides high isolation in a low-cost, plastic surface mount package. The SW -475 is ideal for applications across a broad range of frequencies including synthesizer switching, transmit / receive switching, switch matrices and filter banks in systems such as radio and cellular equipment, PCS, GPS, and fiber optic modules. M/A- fabricates the SW-475 using an 0.5-micron gate length MESFET process. The process Features full chip passivation for performance and reliability. PIN Configuration Pin Function Description Pin Function Description 17 GND RF ground - - - 1 2 3 4 5 6 7 8 RF2 GND GND V1 V2 GND RFC GND RF port RF ground RF ground Control 1 Control 2 RF ground RF port RF ground (pad) 16 15 14 13 12 11 10 9 GND GND GND GND RF1 GND GND GND RF ground RF ground RF ground RF ground RF port RF ground RF ground RF ground Handling Procedures The following precautions should be observed to avoid damage: Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Truth Table Mode (Control) Positive1 Negative2 V1 0 1 V2 1 0 RFC RF1 ON OFF RFC RF2 OFF ON Logic Level V LO “0” = V HIGH 1” = Voltage Level 0 ± 0.2 V V C ± 0.2 V 1. External DC blocking capacitors required on all RF ports. We remend 47 p F. 2. 3.0 V < VC < 8.0 V. SPDT High Isolation, Terminated Switch, 0.5 - 3.0 GHz Electrical Specifications: Parameter Insertion Loss 0.5- 1 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz Isolation 0.5 - 1 GHz...