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UF282OP - RF MOSFET Power Transistor

Key Features

  • l l l l l Transistor, 2OW, 28V UF2820P v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband Common Source Configuration Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature I StorageTemperature 1 Thermal Resistance I I V05 VGS IDS PD T, TSTG I 65 20 2.8 53 200 1 -55to+150 I I V v A W “C “C ( I Electrical Charac.

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RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 2OW, 28V UF2820P v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband Common Source Configuration Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature I StorageTemperature 1 Thermal Resistance I I V05 VGS IDS PD T, TSTG I 65 20 2.