Click to expand full text
RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive . . Mode Device
UF2820R
Absolute Maximum Ratings at 25°C
Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 Symbol 1 VOS VGS IOS
PO
Rating 6.5 20 4 61 200 -55 to +150 2.66
Units V V A w “C “C “C/W
T TST0 8JC
Electrical Characteristics
at 25°C
Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Cass CRss GP
00
V,,=28.0 V, F=l .OMHz 30 8 10 50 2O:l PF PF dB % V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.
UF282OR Datasheet
