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UF282OR - RF MOSFET Power Transistor

Key Features

  • N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive . . Mode Device UF2820R Absolute Maximum Ratings at 25°C Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 Symbol 1 VOS VGS IOS PO Rating 6.5 20 4 61 200 -55 to +150 2.66 Units V V A w “C “C “C/W T TST0 8JC Electrical Characteristics at 25°C.

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Part Number Description
UF282OP RF MOSFET Power Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive . . Mode Device UF2820R Absolute Maximum Ratings at 25°C Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance 1 Symbol 1 VOS VGS IOS PO Rating 6.5 20 4 61 200 -55 to +150 2.66 Units V V A w “C “C “C/W T TST0 8JC Electrical Characteristics at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Cass CRss GP 00 V,,=28.0 V, F=l .OMHz 30 8 10 50 2O:l PF PF dB % V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.