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UF284OG - RF MOSFET Power Transistor

Key Features

  • l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Voltage Voltage Symbol V OS V GS ‘OS P, 1 T, ( Rating 65 20 4’ 116 200 -55 to +150 1.52 I Units V V A w “C “C “C/w 1 F I 6.22 I 6.48 1 a245 I .2X5 I Drain-Source&rent Power Dissipation 1 JunctionTemperature I S.

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-3== -0-z =z -- 32 -z= .-me--= = * an AMP company RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Voltage Voltage Symbol V OS V GS ‘OS P, 1 T, ( Rating 65 20 4’ 116 200 -55 to +150 1.52 I Units V V A w “C “C “C/w 1 F I 6.22 I 6.48 1 a245 I .2X5 I Drain-Source&rent Power Dissipation 1 JunctionTemperature I Storage Temperature Thermal Resistance TST0 8JC 1 K I l.18 I 203 I .070 I x180 I Electrical Characteristics at 25°C * Per Side Specificatms Subject to Change Without Notice. M/A-COM, Inc.