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an
=y FE AMP
comDanv
RF MOSFET Power 100 - 500 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor
. .
Transistor,
4OW, 28V
UF284OP
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
i
D
i
627
i
6.33
1
247
1
257
1
H J
] 1
1.40 292
1 I
165 3.M
1 I
055 115
1 I
.D65 325
Electrical Characteristics
at 25°C
input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance
* Per Side
C ISS C oss C RSS GP
qD
-
)
45 30 a
pF pF PF dB % -
Vg28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0
V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=500.0 mA, P,fi40.0 V, 1,,=500.0 mA, Po,,=40.0 V, 1,,=500.0 mA, P,,g40.0 W.
UF284OP Datasheet
