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an AMP company
RF MOSFET Power 100 - 500 MHz
Features
l l l l l
Transistor,
4OW, 28V
UF2840G
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances
Mode Device Operation Devices
for Broadband
High Saturated Output Power Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Gate-Source Voltage Voltage
Symbol
V OS V GS ‘OS P, 1 T, (
Rating
65 20 4’ 116 200 -55 to +150 1.52 I
Units
V V A w “C “C “C/w
1 F I 6.22 I 6.48 1 a245 I .2X5 I
Drain-Source&rent Power Dissipation 1 JunctionTemperature
I
Storage Temperature
Thermal Resistance
TST0
8JC
1
K
I
l.18 I 203
I
.070 I
x180 I
Electrical Characteristics
at 25°C
* Per Side Specificatms Subject to Change Without Notice.
UF2840G Datasheet
