UF2840G Datasheet | Tyco Electronics

Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than petitive Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Voltage Voltage Symbol V OS V GS ‘OS P, 1 T, ( Rating 65 20 4’ 116 200 -55 to +150 1.52 I Units V V A w “C “C “C/w 1 F I 6.22 I 6.48 1 a245 I .2X5 I Drain-Source&rent Power Dissipation 1 Junction Temperature Storage Temperature Thermal Resistance TST0 8JC I l.18 I 203 .070 I x180 I Electrical Characteristics at 25°C - Per Side Specificatms Subject to Change Without Notice. M/A-, Inc. RF MOSFET Power Transistor, 4OW, 28V U F2840G v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V,,=28 V I,,=500 m A P,,,=40 W EFFICIENCY V,,=28 vs FREQUENCY m A P,,,~40...