UF28100M Datasheet | Tyco Electronics

Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, l OOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than petitive Absolute Maximum Ratings at 25°C pi Power Dissipation Junction Temperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.7 W “C “C “Ciw PD T, T STG El JO I4 II P &w 505 m t.74 a&b, a¶ .m4 am ooc 1 1 1 ale a?4 ace Electrical Characteristics I Parameter at 25°C ( Symbol 1 Min 1 Max 1 Units 1 Test Conditions Drain-Source Breakdown Voltage BVDSS ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.5 C RSS % 3.0 3.0 V m A p A V S p F p F p F d B % d B - Drain-Source Leakage Current Gate-Source Leakage Current V,,=O.O V, I,,=150 v,,=2a.o v,,=20 V,,=l O.O V,,=l O.O v,=2a.o V,s=28.0 m A’ v. vo,=o.o v v, v,,=o.o V’ m A‘ m A, ~v,,=l .O V, 80 ps Pulse’ Gate Threshold Voltage Forward Transconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance - Per Side Specifications 2.0 1.5 6.0 135 90 24 V, 1,,=300.0 V, 1,,=3000.0 v, F=l .o MHz’ V, F=l .O MHz’ v,,=2a.ov, F=I .OMHZ- V,,=28.0 -v,,=%.O V,,=28.0 v,,=28.0 V, 1,,=600.0 V, 1,,=600.0 V, 1,,=600.0 V. 1,,=600.0 m A, P,,=l OO.O m A, P,,=l OO.O W. F=500 MHz W, F=500 MHz 10 50 10 3O:l m A, PO,,=1 00.0 W, F=500 MHz m A, P,,,.=100.0 W, F=500 MHz VSWR-T - Subject to Change Without Notice. M/A-, inc. RF MOSFET Power Transistor, IOOW,...