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UF28100M - RF MOSFET Power Transistor

Datasheet Summary

Features

  • N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, lOOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C pi Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.7 W “C “C “Ciw PD T, T STG El JO I4 II P &w 505 m t.74 a&b, a¶ . m4 am ooc 1 1 1 ale a?4 ace Electrical Characteristics I Parameter at 25°C ( Symbol 1 Min.

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Datasheet Details

Part number UF28100M
Manufacturer Tyco Electronics
File Size 188.74 KB
Description RF MOSFET Power Transistor
Datasheet download datasheet UF28100M Datasheet
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an AMP company RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, lOOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C pi Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.7 W “C “C “Ciw PD T, T STG El JO I4 II P &w 505 m t.74 a&b, a¶ .m4 am ooc 1 1 1 ale a?4 ace Electrical Characteristics I Parameter at 25°C ( Symbol 1 Min 1 Max 1 Units 1 Test Conditions 1 Drain-Source Breakdown Voltage BVDSS ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.5 C RSS % 65 3.0 3.0 V mA pA V S pF pF pF dB % dB - Drain-Source LeakageCurrent Gate-Source Leakage Current I V,,=O.
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