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RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices
UF281 OOH
for Broadband
High Saturated Output Power Lower Noise Figure Than Competitive
Input Capacitance Qutput Capacitance ReverseCapacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance
* Per Side
c IS C OS C RSS GP % RL VSWR-T
-
13.5
pF PF pF dB % dB
-
V,,=28.0
V, F=l .O MHz’
90
‘24
VD,=28.0 V, F=l.O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0
V,,=28.0
V, F=l .O MHz‘ V, 1,,=800.0 mA, P,ylOO.O V, l,0=600.0 mA, P,&OO.O V, 1,,=600.0 mA, P,elOO.O V, 1,,=600.0 mA, P,,~lOO.O W, F=500 MHz W, F&O0 MHz W, F=500 MHz W, F=500 MHz
10 50
10
3O:l
-
RF MOSFET Power Transistor,
IOOW, 28V
UF281OOH
v2.
UF281OOH Datasheet
