UF281OOH Datasheet | Tyco Electronics

Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices UF281 OOH for Broadband High Saturated Output Power Lower Noise Figure Than petitive Input Capacitance Qutput Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance - Per Side c IS C OS C RSS GP % RL VSWR-T - 13.5 p F PF p F d B % d B - V,,=28.0 V, F=l .O MHz’ ‘24 VD,=28.0 V, F=l.O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz‘ V, 1,,=800.0 m A, P,yl OO.O V, l,0=600.0 m A, P,&OO.O V, 1,,=600.0 m A, P,el OO.O V, 1,,=600.0 m A, P,,~l OO.O W, F=500 MHz W, F&O0 MHz W, F=500 MHz W, F=500 MHz 10 50 3O:l - RF MOSFET Power Transistor, IOOW, 28V UF281OOH v2.00 Typical Broadband Performance Curves EFFICIENCY P,,=l O W I,,=600 80- vs FREQUENCY m A (Push-Pull Device) 120 100 So 60 40 20 POWER OUTPUT vs SUPPLY VOLTAGE P,,=l O W I,,=600 m A F=500 MHz . . 200 300 400 0 14 16 20 24 28 32 FREQUENCY (MHz) SUPPLY VOLTAGE (V) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 m A (Push-Pull Device) 0 0 1 2 4 6 8 10...