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UF281OOH - RF MOSFET Power Transistor

Key Features

  • N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices UF281 OOH for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Input Capacitance Qutput Capacitance ReverseCapacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance.
  • Per Side c IS C OS C RSS GP % RL VSWR-T - 13.5 pF PF pF dB % dB - V,,=28.0 V, F=l . O MHz’ 90 ‘24 VD,=28.0 V, F=l. O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l . O MHz‘ V, 1,,=.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
UF281OOM RF MOSFET Power Transistor
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices UF281 OOH for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Input Capacitance Qutput Capacitance ReverseCapacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance * Per Side c IS C OS C RSS GP % RL VSWR-T - 13.5 pF PF pF dB % dB - V,,=28.0 V, F=l .O MHz’ 90 ‘24 VD,=28.0 V, F=l.O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz‘ V, 1,,=800.0 mA, P,ylOO.O V, l,0=600.0 mA, P,&OO.O V, 1,,=600.0 mA, P,elOO.O V, 1,,=600.0 mA, P,,~lOO.O W, F=500 MHz W, F&O0 MHz W, F=500 MHz W, F=500 MHz 10 50 10 3O:l - RF MOSFET Power Transistor, IOOW, 28V UF281OOH v2.