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RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz
Features
l l l l l
UF281 OOV
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower
&lode Device Operation
for Broadband
High Saturated Output Power
Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units
V V
A
Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance
PD
TJ T sic 8 IP
W
“C “C “crw
Electrical _____.._~~
Parameter Drain-Source Drain-Source Gate-Source
Characteristics at 25°C
Symbol Breakdown Min Max Units lest Conditions
Voltage
BV,,,
IDSS ‘GSS
65 ,
2.0 1.5 -
3.0 ) 3.
UF281OOV Datasheet
