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UF281OOV - RF MOSFET Power Transistor

Key Features

  • l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units V V A Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance PD TJ T sic 8 IP W “C “C “crw Elec.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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* e-5 -,--5 3 .---= = = -a== =- an AMP company RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz Features l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units V V A Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance PD TJ T sic 8 IP W “C “C “crw Electrical _____.._~~ Parameter Drain-Source Drain-Source Gate-Source Characteristics at 25°C Symbol Breakdown Min Max Units lest Conditions Voltage BV,,, IDSS ‘GSS 65 , 2.0 1.5 - 3.0 ) 3.