UF281OOV Datasheet | Tyco Electronics

Features l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than petitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units Power Dissipation Junction Temperature Storage Temperature Thermal Resistance TJ T sic 8 IP “C “C “crw Electrical _____.._~~ Parameter Drain-Source Drain-Source Gate-Source Characteristics at 25°C Symbol Breakdown Min Max Units lest Conditions Voltage BV,,, IDSS ‘GSS 65 , 2.0 1.5 - 3.0 ) 3.0 6.0 135 90 24 ] I V m A fl V,.=O.O V. I& V,,=28.0 , 1 v,,=2ov, I 5.0 m A Leakage Current Leakage Current V, V,,=O.O V’ v Ds=o.o v Gate Threshold Voltage Forward Transconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency . Load Mismatch Tolerance - Per Side V GSIW GM c 15s C ass S p F PF p F d B % - V,,=l O.O V, 1,,=300.0 V, 1,,=3000.0 m A‘ m A, AV,,=l .O V, 80 us Pulse’ V,,=10.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0...