Click to expand full text
an AMP company
RF MOSFET Power 100 - 500 MHz
Features
l l l l l l
Transistor,
IOW, 28V
UF281 OP
N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor
Mode Device Operation
for Broadband
Common Source Configuration 100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
L N
1 1
1% 3.61
1 246 1 4.37 1
077 J42 1
.097 .I72
Electrical Characteristics
at 25°C
Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side
C oss 0, GP 10
5 2.4 203
PF pF dB % -
V,,=28.0
V, I==1 .O MHz’
VDs=28.0 V, F=l .O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V, I,,,=1 00.0 mA, PO,,,=1 0.0 W, F=500 MHz V, I,,=1 00.0 mA, P,& V, IDo= 00.0 mA, Poe1 0.0 W, F=500 MHz 0.
UF281OP Datasheet
