UF281OP Datasheet | Tyco Electronics

Features l l l l l l Transistor, IOW, 28V UF281 OP N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband mon Source Configuration 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C 1 1 1% 3.61 1 246 1 4.37 1 077 J42 1 .097 .I72 Electrical Characteristics at 25°C Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance - Per Side C oss 0, GP 10 5 2.4 203 PF p F d B % - V,,=28.0 V, I==1 .O MHz’ VDs=28.0 V, F=l .O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V, I,,,=1 00.0 m A, PO,,,=1 0.0 W, F=500 MHz V, I,,=1 00.0 m A, P,& V, IDo= 00.0 m A, Poe1 0.0 W, F=500 MHz 0.0 W, F=500 MHz 9D VSWR-T - pecifications Subject to Change Without Notice. RF MOSFET Power Transistor, i OW, 28V UF281 OP v2.00 Typical Device impedance Frequency (MHz) &., (OHMS) 30.0 - i 150.0 15.0 - j 90.0 4.2 - j 46.0 V,,=28 V, l,=j OO m A, P,,?l O.O Watts z LOAD (OHMS) 70.0 + i 110.0 55.0 + j 80.0 48.0 + j 50.0 300 500 Z,, is the series equwalent input impedance of the device from gate to gate. Z LOAD is tbe optimum series equivalent load impedance as measured from drain to drain. RF Test Fixture P Cl0 c5 cl ii36 7, a 9 cu. 12 13, 1% 17 us Cl6 z L3 Tt...