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UF281OP - RF MOSFET Power Transistor

Key Features

  • l l l l l l Transistor, IOW, 28V UF281 OP N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband Common Source Configuration 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C L N 1 1 1% 3.61 1 246 1 4.37 1 077 J42 1 .097 . I72 Electrical Characteristics at 25°C Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance.
  • Per Side C oss 0, GP 10 5 2.4 203 PF pF dB % - V,,=28.0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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an AMP company RF MOSFET Power 100 - 500 MHz Features l l l l l l Transistor, IOW, 28V UF281 OP N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor Mode Device Operation for Broadband Common Source Configuration 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C L N 1 1 1% 3.61 1 246 1 4.37 1 077 J42 1 .097 .I72 Electrical Characteristics at 25°C Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side C oss 0, GP 10 5 2.4 203 PF pF dB % - V,,=28.0 V, I==1 .O MHz’ VDs=28.0 V, F=l .O MHz’ V,,=28.0 V,,=28.0 V,,=28.0 V, I,,,=1 00.0 mA, PO,,,=1 0.0 W, F=500 MHz V, I,,=1 00.0 mA, P,& V, IDo= 00.0 mA, Poe1 0.0 W, F=500 MHz 0.