UF28150J Datasheet | Tyco Electronics

FEATURES OUTLINE DRAWING - N-Channel Enhancement Mode Device - Applications - 150 Watts CW - mon Source Gemini Configuration - RESFET Structure - Internal Input Impedance Matching - Gold Metallization ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Dissipation @25°C Storage Temperature Junction Temperature Thermal Resistance VDS VGS IDS PD Tstg Tj 60 20 28 233 -55 to +150 200 0.75 Units V V A W °C °C °C/W θjc ELECTRICAL CHARACTERISTICS AT 25°C (- per side) Parameter Symbol Min Max Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Reverse Capacitance Output Capacitance Power Gain Collector Efficiency Load Mismatch Tolerance BVDSS IDSS IGSS VGS(th) Gm CISS CRSS COSS GP 10 50 60 2.0 1.0 4.0 2.0 6.0 200 50 14 3.0:1 Units V m A µA V S p F p F p F d B % - Test Conditions ID=40 m A, VGS=0.0 V- VDS=28.0 V, VGS=0.0 V- VGS=20 V, VDS=0.0 V- VDS=10.0 V, IDS=200 m A- VDS=10.0 V, IDS=2000 m A (pulsed)- VDS=28.0 V, f=1.0 MHz (Reference Only)- VDS=28.0 V, f=1.0 MHz- VDS=28.0 V, f=1.0 MHz- VDD=26 V, IDQ=400 m A, Pout=80 W, F=960 MHz VDD=26 V, IDQ=400 m A, Pout=80 W, F=960 MHz VDD=26 V, IDQ=400 m A, Pout=80 W, F=960 MHz η VSWR TYPICAL OPTIMUM DEVICE IMPEDANCE F (MHz) Z in (Ω) Z load (Ω) 935 960 4.6 + j8.0 4.7 + j7.8 2.3 + j3.1 2.4 + j3.1 M/A- POWER TRANSISTORS - 1742 CRENSHAW BLVD - TORRANCE, CA 90501 (310) 320-6160 - FAX (310) 618-9191 M/A-, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96 TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J Output Power vs Input Power Power Output (W) 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 Power Input (W) 960 MHz 935 MHz Vds = 26 V Idq = .40 A Output Power vs Drain Voltage Power Output (W) 100 90 80 70 60 50 40 30 20 10 0 19 21 23 25 27 29 Drain Voltage (V) Frequency = 960 MHz Idq = .40 A Pin = 8.0 W Gain vs. Frequency 12 11.5 11...