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UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V
FEATURES OUTLINE DRAWING
• N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching • Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Dissipation @25°C Storage Temperature Junction Temperature Thermal Resistance VDS VGS IDS PD Tstg Tj 60 20 28 233 -55 to +150 200 0.
UF28150J Datasheet
