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UF2815B - RF MOSFET Power Transistor

Key Features

  • l l l l l l UF28156 v2.00 N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C L n 3.66 . lO 4.32 35 344 JJ04 1 . l70 DO6 Electrical Characteristics at 25°C InputCapacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance Ccm CRSS GP ‘7D VSWR-T 10 50 15 7.2 2O:l pF pF dB % - V,,=28.0 V, F=l . O MHz V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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= EC ----z = an AMP company RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz Features l l l l l l UF28156 v2.00 N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C L n 3.66 .lO 4.32 35 344 JJ04 1 .l70 DO6 Electrical Characteristics at 25°C InputCapacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance Ccm CRSS GP ‘7D VSWR-T 10 50 15 7.2 2O:l pF pF dB % - V,,=28.0 V, F=l .O MHz Vos=28.0 V, F=l .OMHz V,,=28.0 V. F=l .OMHz V,,=28.0 V, 1,,=150.0 mA, P,,$5.0 V,,=28.0 V, I,,=1 50.0 mA, P,,~l5.0 V,,=28.0 V, 1,,=150.0 mA, P,,,=l5.0 W, F&O0 MHz W, F=500 MHz W.