Click to expand full text
= EC
----z =
an AMP company
RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz
Features
l l l l l l
UF28156
v2.00
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
L n
3.66 .lO
4.32 35
344 JJ04 1
.l70 DO6
Electrical Characteristics
at 25°C
InputCapacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance Ccm CRSS GP ‘7D VSWR-T 10 50 15 7.2 2O:l pF pF dB % -
V,,=28.0 V, F=l .O MHz Vos=28.0 V, F=l .OMHz V,,=28.0 V. F=l .OMHz V,,=28.0 V, 1,,=150.0 mA, P,,$5.0 V,,=28.0 V, I,,=1 50.0 mA, P,,~l5.0 V,,=28.0 V, 1,,=150.0 mA, P,,,=l5.0 W, F&O0 MHz W, F=500 MHz W.
UF2815B Datasheet
