UF2815B
UF2815B is RF MOSFET Power Transistor manufactured by Tyco Electronics.
Features l l l l l l
UF28156 v2.00
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation mon Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
L n
3.66 .l O
4.32 35
344 JJ04 1
.l70 DO6
Electrical Characteristics at 25°C
Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Ccm CRSS GP ‘7D VSWR-T 10 50 15 7.2 2O:l p F p F d B %
- V,,=28.0 V, F=l .O MHz Vos=28.0 V, F=l .OMHz V,,=28.0 V. F=l .OMHz V,,=28.0 V, 1,,=150.0 m A, P,,$5.0 V,,=28.0 V, I,,=1 50.0 m A, P,,~l5.0 V,,=28.0 V, 1,,=150.0 m A, P,,,=l5.0 W, F&O0 MHz W, F=500 MHz W. F=500 MHz
Specifications
Subject to Change Without Notice.
M/A-, inc.
RF MOSFET Power Transistor,
15W, 28V
UF2815B v2.00
Typical Broadband Performance
Curves
POWER OUTPUT
CAPACITANCES
16 , vs VOLTAGE vs VOLTAGE
MHz
F=l .O MHz
P,,=l .O W IDO= 50 m A F&O0
10 5 t a-
.
2r
15 ",, (")
GAIN vs FREQUENCY v,,r28 V P,,=15 W l DQ=l OO m A
EFFICIENCY vs FREQUENCY m A PO,,=15 W
VDD=28 V...
