UF2840P Datasheet | Tyco Electronics

Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation mon Source Configuration Lower Noise Floor . . Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units i D i 627 i ] 1 1.40 292 1 I 165 3.M 1 I 055 115 1 I .D65 325 Electrical Characteristics at 25°C input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance - Per Side C ISS C oss C RSS GP q D - ) 45 30 a p F p F PF d B % - Vg28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=500.0 m A, P,fi40.0 V, 1,,=500.0 m A, Po,,=40.0 V, 1,,=500.0 m A, P,,g40.0 W. F=500 MHz W, F=500 MHz W, F=500 MHz 10 50 - 2O:l VSWR-T Specifications Subject to Change Without Notice. MIA-, Inc. RF MOSFET Power Transistor, 4OW, 28V U F284OP v2.00 Typical Broadband Performance Curves CAPACITANCES 40 vs...