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MA02303GJ - RF Power Amplifier IC for 2.4 GHz ISM

General Description

The MA02303GJ is an RF power amplifier based on M/A-COM’s Self-Aligned MSAG® MESFET Process.

This product is designed for use in 2.4 GHz ISM products.

Key Features

  • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS.
  • Single Positive Supply.
  • Power Added Efficiency As High As 55 Percent.
  • IP3 = +43 dBm.
  • Output Power 26.5 dBm @ 3.3 V.
  • Output Power 28.5 dBm @ 5.0 V.
  • 100 Percent Duty Cycle.
  • 2200 to 2600 MHz Operation.
  • 8 Pin MSOP Full Downset Plastic Package.
  • Operates Over Wide Ranges of Supply Voltage.
  • Self-Aligned MSAG®-Lite MESFET Process Functi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Features • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm • Output Power 26.5 dBm @ 3.3 V • Output Power 28.5 dBm @ 5.0 V • 100 Percent Duty Cycle • 2200 to 2600 MHz Operation • 8 Pin MSOP Full Downset Plastic Package • Operates Over Wide Ranges of Supply Voltage • Self-Aligned MSAG®-Lite MESFET Process Functional Schematic PIN 1 PIN 8 Description The MA02303GJ is an RF power amplifier based on M/A-COM’s Self-Aligned MSAG® MESFET Process. This product is designed for use in 2.4 GHz ISM products.