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MA02305AK - 3.0 V 100 mW RF Power Amplifier IC for Bluetooth

General Description

The MA02305AK is an RF power amplifier based on M/ACOM’s Self-Aligned MSAG® MESFET Process.

This product is designed for use in 2.4 GHz ISM products as a booster for high power Bluetooth devices.

Key Features

  • n 20 dB Gain.
  • dramatically increases range of your low MA02305AK power Bluetooth devices n Single 3.0V positive supply.
  • operates over a wide range of supply voltages n Extremely small size.
  • 6 pin SOT plastic package n n n n n 3 mm x 1.75 mm body size Output power easily controllable via VDD1 45% Power Added Efficiency 100% Duty Cycle 2000 to 2900 MHz Operation Self-Aligned MSAG®-Lite MESFET Process.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3.0 V 100 mW RF Power Amplifier IC for Bluetooth V 1.00 MA02305AK Features n 20 dB Gain – dramatically increases range of your low MA02305AK power Bluetooth devices n Single 3.0V positive supply – operates over a wide range of supply voltages n Extremely small size – 6 pin SOT plastic package n n n n n 3 mm x 1.75 mm body size Output power easily controllable via VDD1 45% Power Added Efficiency 100% Duty Cycle 2000 to 2900 MHz Operation Self-Aligned MSAG®-Lite MESFET Process Description The MA02305AK is an RF power amplifier based on M/ACOM’s Self-Aligned MSAG® MESFET Process. This product is designed for use in 2.4 GHz ISM products as a booster for high power Bluetooth devices.