MAAM26100-B1 Datasheet | Tyco Electronics

Features -  Saturated Power: 30.5 d Bm Typical -  Gain: 19 d B Typical -  Power Added Efficiency: 30% -  DC Decoupled RF Input and Output -  Lead-Free 7-Lead Ceramic Package -  Ro HS- pliant and 260°C Reflow patible Description The MAAM26100-B1 is a Ga As MMIC two stage high efficiency power amplifier in a small, lead-free, 7-leadceramic package. The MAAM26100-B1 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100-B1 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. The MAAM26100-B1 is fabricated using a mature 0.5-micron gate length Ga As process. The process features full passivation for increased performance reliability. Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD VGG RF Input Power +9 V -6 V to -3 V +17 d Bm Channel Temperature 150°C Storage Temperature -65°C to +150°C 1. Exceeding any one or bination of these limits may cause permanent damage to this device and will void product warranty. 2. M/A- Tech does not remend sustained operation near these survivability limits. Functional Diagram 3,4 1000 p F 1000 p F 654 3 Rev. V7 7 RF IN 2 RF OUT 3. Nominal bias is obtained by first connecting - 5 volts to pin 1 (VGG), followed by connecting +8 volts to pin 5 (VD1) and pin 4 (VD2). Note sequence. 4. RF ground and thermal interface are the case bottom. Adequate heat sinking is required. Pin Configuration Pin No. Function Pin...