MAAM28000-A1 Datasheet | Tyco Electronics

Features q q q q q q V 2.00 CR-3 High Gain: 17 d B Gain Flatness: ±0.5 d B Single Supply: +10 V No External ponents Required DC Decoupled RF Input and Output Small, Low Cost 8-Lead Ceramic Package Description M/A-’s MAAM28000-A1 is a wide band, MMIC amplifier housed in a small 8-lead ceramic package. It includes two distributed gain stages to obtain flat gain and a good, 50-ohm, input and output impedance match over a very wide bandwidth. The MAAM28000-A1 operates from a single +10 V supply. It is fully monolithic, requires no external ponents, and is provided in a low-cost, user-friendly, microwave package. The MAAM28000-A1 performs well as a generic IF, driver or buffer amplifier where high gain, excellent linearity and low power consumption are important. Because of its wide bandwidth, the MAAM28000-A1 can be used in numerous mercial and government system applications, such as satellite munications, RLL, EW and radar. The MAAM28000-A1 is manufactured in-house using a reliable, 0.5-micron, Ga As MESFET process. This product is 100% RF tested to ensure pliance to performance specifications. Ordering Information Part Number MAAM28000-A1 MAAM28000-A1G Package 8-Lead Ceramic Gull Wing Electrical Specifications Test Conditions: TA = +25°C, ZO = 50 ⍀, VDD = +10 V, PIN = -30 d Bm Parameter Gain Noise Figure Test Conditions 2 - 4 GHz 4 - 6 GHz 6 - 8 GHz Units d B d B d B d B d B Min. 14 Typ. 17 6.5 5.5 4.5 ± 0.5 1.6:1 1.5:1 +14 +7 35 70 Max. 8.0 6.5 6.0 Gain Flatness Input VSWR Output VSWR Output 1 d B pression Input IP3 Reverse Isolation Bias Current d Bm d Bm d B m A Wide Band Ga As MMIC Amplifier V 2.00 Absolute Maximum Ratings Parameter VDD Input Power Current Channel Temperature 2 Operating Temperature Storage Temperature Schematic Absolute Maximum +14 volts +20 d Bm 150 m A +150°C -55°C to +100°C -65°C to +150°C 1. Operation of this device outside these limits may cause permanent damage. 2. Typical thermal resistance ( jc) =...