Description
The QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
Features
- z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
Dual SOP8 Pin Configuration
D1 D1D2 D2
Absolute Maximum Ratings
S1 G1S2 G2
Symbol
VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous.
QM2605S Datasheet
