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UM6116-2 - 2K x 8 High Speed CMOS SRAM

General Description

The UM6116 is a 16,384-bit static random access memory organized as 2048 words by 8 bits and operates from a sign Ie 5 volt supply.

It is built with UMC's high performance CMOS process.

provides low standby current and high-reliability.

Key Features

  • Single 5V supply and high density 24 pin package.
  • High speed: Fast access time 70ns/90ns/120ns( max. ).
  • Low power standby and Standby: 5JlW (typ. ) Low power operation Operation: 250mW (typ. ).
  • Completely static RAM: No clock or timing strobe required.
  • Directly TTL compatible: All input and output.
  • Pin compatible with standard 16K EPROM/Mask ROM.
  • Equal access and cycle time General.

📥 Download Datasheet

Datasheet Details

Part number UM6116-2
Manufacturer UMC
File Size 183.43 KB
Description 2K x 8 High Speed CMOS SRAM
Datasheet download datasheet UM6116-2 Datasheet

Other Datasheets by UMC

Part Number Description
UM6116-25 (UM6116-35 / UM6116-45) 2k x 8 High Speed CMOS SRAM
UM6116-3 2K x 8 High Speed CMOS SRAM
UM6116-4 2K x 8 High Speed CMOS SRAM
UM6116-5 2K x 8 High Speed CMOS SRAM
UM6116-V Wide Voltage 2k x 8 CMOS SRAM
UM6116 (UM6114) 1k x 4 CMOS SRAM
UM61166 4k x 16 CMOS Cache RAM
UM6114 1K x 4 CMOS SRAM
UM6104 1K x 4 CMOS SRAM
UM6104-1 1K x 4 CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUMO UM6116-2/ UM6116-3/ UM6116-4 2K X 8 High Speed CMOS SRAM Features • Single 5V supply and high density 24 pin package • High speed: Fast access time 70ns/90ns/120ns( max.) • Low power standby and Standby: 5JlW (typ.) Low power operation Operation: 250mW (typ.) • Completely static RAM: No clock or timing strobe required • Directly TTL compatible: All input and output • Pin compatible with standard 16K EPROM/Mask ROM • Equal access and cycle time General Description The UM6116 is a 16,384-bit static random access memory organized as 2048 words by 8 bits and operates from a sign Ie 5 volt supply. It is built with UMC's high performance CMOS process. Six-transistor full CMOS memory cell provides low standby current and high-reliability.