NTMD3P03R2G - Dual -30V P-ChanneI MOSFET

General Description

SOP-8 2,4 G GATE 1,3 5,6,7,8 S SOURCE D DRAIN G1 G2 S1 G1 S2 G2 1234 S1 S2 3.Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Junction to Ambient (Note 1) Total Power Dissipation @ TA=25°C Continuous Drain Curr

Key Features

VDS (V)=-30V RDS(ON).

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NTMD3P03R2G dual -30v p-channei mosfet by UMW - Datasheet Preview

Datasheet Details

Part number	NTMD3P03R2G
Manufacturer	UMW
File Size	197.93 KB
Description	Dual -30V P-ChanneI MOSFET
Datasheet	NTMD3P03R2G Datasheet

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UMW NTMD3P03R2G Dual -30V P-ChanneI MOSFET 1.Features VDS (V)=-30V RDS(ON)<85mΩ(VGS=-10V) RDS(ON)<125mΩ(VGS=-4.5V) High Density Power MOSFET with Low RDS(ON) High Efficiency Components in a Dual SOP−8 Package Miniature SOP-8 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature Avalanche Energy Specified Diode Exhibits High Speed with Soft Recovery 3.Pinning information 5678 D1 D1 D2 D2 D1 D2 Pin Symbol Description SOP-8 2,4 G GATE 1,3 5,6,7,8 S SOURCE D DRAIN G1 G2 S1 G1 S2 G2 1234 S1 S2 3.