P0460CTF-P - N-Channel MOSFET

UNIKC

Datasheet Details

Part number	P0460CTF-P
Manufacturer	UNIKC
File Size	378.44 KB
Description	N-Channel MOSFET
Datasheet	P0460CTF-P Datasheet
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P0460CTF-P N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2.7Ω @VGS = 10V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 4 2.4 IDM 15 IAS 2 EAS 20 Power Dissipation TC = 25 °C PD 24 TC = 100 °C 9.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.

Published: Feb 9, 2017 |