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P0603BDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID 72A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
72 46 160
Avalanche Current
IAS 50
Avalanche Energy
L=0.1mH
EAS
126
Power Dissipation
TC= 25 °C TC= 100°C
PD
55 22
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2.3 °C / W
REV 1.
P0603BDB Datasheet
