The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P0603BDL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 6.8mΩ @VGS = 10V
ID 68A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
68 43 160
Avalanche Current
IAS 52
Avalanche Energy
L = 0.3mH
EAS
135
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
2.5 62.5
UNITS °C / W
Ver 1.
P0603BDL Datasheet
