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P0603BEAD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID 56A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
56
Continuous Drain Current1,2
TC = 100 °C TA = 25 °C
ID
35 14.5
Pulsed Drain Current1
TA = 70 °C
IDM
11.6 100
Avalanche Current
IAS 38
Avalanche Energy
L = 0.1mH
EAS
72
TC = 25 °C
31
Power Dissipation
TC = 100 °C TA = 25 °C
PD
12 2.1
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P0603BEAD Datasheet
