UNIKC P0603BT
N-Channel MOSFET
| Part No. | P0603BT |
|---|---|
| Datasheet | P0603BT Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 82 52 200 Avalanche Current IAS 34 Avalanche Energy L = 0.3mH EAS 170 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.8 62.5 UNITS °C / W Ver 1.0 1 2012/4/16 P0603BT N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST
