UNIKC P1003BDF
N-Channel MOSFET
| Part No. | P1003BDF |
|---|---|
| Datasheet | P1003BDF Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC= 25 °C TC= 100 °C ID IDM 62 39 120 Avalanche Current IAS 29 Avalanche Energy L=0.1mH EAS 43 Power Dissipation TC= 25 °C TC= 100°C PD 73 29 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 52A. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.7 °C / W REV 1.0 1 2014/5/12 P1003BDF N-Channel Logic Level Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source B
