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P1003BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ @VGS = 10V
ID 49A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TC = 25 °C (Package Limited)
TC = 25 °C(Silicon Limited)
ID
30 49
Pulsed Drain Current1
TC = 100 °C
31 IDM 120
Continuous Drain Current
TA = 25 °C TA = 70 °C
13 ID 10
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1mH
EAS 40
Power Dissipation
TC = 25 °C TC = 100 °C
35 PD 14
Power Dissipation
TA = 25 °C TA = 70 °C
2.5 PD 1.
P1003BK Datasheet
