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P1006BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID 43A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
43 27 120
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
10 8
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
72
Power Dissipation
TC = 25 °C TC = 100 °C
PD
41 16
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.1 1.
P1006BK Datasheet
