P1006BTF
P1006BTF / P1006BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V
10mΩ @VGS = 10V
47A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
47 29
Avalanche Current
Avalanche Energy
L = 0.1 m H
Power Dissipation
TC= 25 °C TC= 100°C
48 19
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction...
