The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P1203BKA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 11.8mΩ @VGS = 10V
ID 39A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
39
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
24 11
Pulsed Drain Current1
TA = 70 °C
IDM
8 110
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
30
TC = 25 °C
31
Power Dissipation
TC = 100 °C TA = 25 °C
PD
12 2.5
TA = 70 °C
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
Ver 1.
P1203BKA Datasheet
