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P1825HDB - N-Channel MOSFET

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Part number P1825HDB
Manufacturer UNIKC
File Size 778.14 KB
Description N-Channel MOSFET
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P1825HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 230mΩ @VGS = 10V 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 18 11 IDM 51 Avalanche Current IAS 9 Avalanche Energy L = 1mH EAS 40 Power Dissipation TC = 25 °C PD 74 TC = 100 °C 29 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 1.7 °C / W 62.5 REV 1.
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