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P2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -28A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ±25
TC = 25 °C
-28
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current
TC = 100 °C TA = 25 °C TA = 70 °C
ID
IDM IAS
-18 -10 -8 -70 -30
Avalanche Energy
L = 0.1mH
EAS
44
TC = 25 °C
25
Power Dissipation
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
10 3.125
2 -55 to 150
UNITS V
A
mJ W °C
REV1.
P2003EEA Datasheet
