UNIKC P2003EEAA
MOSFET
| Part No. | P2003EEAA |
|---|---|
| Datasheet | P2003EEAA Download |
| Manufacturer |  UNIKC |
| Description | MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 TC = 25 °C -25 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -16 -8 -6.3 -80 -29 Avalanche Energy L = 0.1mH EAS 42 TC = 25 °C 20.8 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 8.3 2 1.2 -55 to 150 UNITS V A mJ W °C REV1.1 1 2014/6/9 P2003EEAA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 Steady-State Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature. RqJA RqJC 62 6 °C / W 2Package limit
