UNIKC P2003ED
P-Channel MOSFET
| Part No. | P2003ED |
|---|---|
| Datasheet | P2003ED Download |
| Manufacturer |  UNIKC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -36 -23 -100 Avalanche Current Avalanche Energy2 IAS -32 L = 0.1 mH EAS 51 Power Dissipation TC = 25 °C PD 42 TC = 100 °C 17 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -15V , Starting TJ = 25 °C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 62.5 UNITS °C / W Ver 1.1 1 2013-3-21 P2003ED P-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS =...
