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P2003ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -36A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±25
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
IDM
-36 -23 -100
Avalanche Current Avalanche Energy2
IAS
-32
L = 0.1 mH
EAS
51
Power Dissipation
TC = 25 °C
PD
42
TC = 100 °C
17
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -15V , Starting TJ = 25 °C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3
62.
P2003ED Datasheet
