The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P2202CV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.5V
ID 8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current2 Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
8 6 80
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1mH
EAS
21
Power Dissipation
TA= 25 °C TA =70 °C
PD
2.5 1.6
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
50
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
P2202CV Datasheet
