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P2204ND5G
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 22mΩ @VGS =10V
-40V
33mΩ @VGS = -10V
ID 24A -19A
Channel N P
TO-252-5
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS P -40
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
N 24
TC = 25 °C
P -19
ID N 19
TC = 100°C
P -15
Pulsed Drain Current1
N 60 IDM P -60
Power Dissipation
TC = 25 °C TC = 100 °C
PD
N 20.8
P N
13.3 P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
W °C
REV 1.
P2204ND5G Datasheet
