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P3503EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
35mΩ @VGS = -10V
ID -8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
ID IDM
-8 -7 -30
Power Dissipation
TC = 25 °C TC = 70 °C
PD
2.5 1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
25 50
UNITS °C / W
REV 1.
P3503EVG Datasheet
